Forno de revestimento CVD de carburo de silício para crescimento de epi de semicondutores

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November 05, 2024
Video Description:
Discover the HTCVD Silicon Carbide CVD SIC Epitaxy Growth Furnace, designed for high-performance semiconductor epi growth. Featuring multiple temperature control zones, this furnace ensures uniform coating and rapid deposition rates up to 50 microns per hour. Ideal for carbon-based and ceramic-based materials, it’s engineered for efficiency and precision in semiconductor manufacturing.
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